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CEO Andy Hsu will introduce NEO Semiconductor’s three-D X-AI™, a game-changing three-D reminiscence with AI processing that mixes information locker and information processing in one chip, accelerating neural efficiency by means of 100X and lowering energy intake by means of 99%
SAN JOSE, Calif., July 17, 2024 /PRNewswire/ — NEO Semiconductor, a well-known developer of cutting edge applied sciences for three-D NAND flash and DRAM reminiscence, nowadays introduced its participation at FMS 2024: the Age of Reminiscence and Vault, taking park in individual in Santa Clara, California, on August 6-8. CEO, Andy Hsu, will ship a keynote cope with titled “New 3D AI Chip Technology Accelerates Generative AI” on August 6th at 11:45 a.m. Pacific Presen.
In line with NEO’s award-winning three-D X-DRAM™ generation, three-D X-AI simulates synthetic neural networks (ANNs), together with synapses for weight information locker and neurons for information processing, making it preferably suited for boost up next-generation AI chips and programs. three-D X-AI substitutes for high-bandwidth reminiscence (HBM) and is anticipated to seriously evolve AI chip design and AI workload optimization. A unmarried three-D X-AI die comprises 300 layers of three-D reminiscence with 128 Gb (gigabit) capability and 1 layer of neural circuitry with 8,000 neurons supporting as much as 10 TB/s (terabytes consistent with 2nd) of AI processing throughput consistent with die. The usage of twelve three-D X-AI dies stacked with HBM packaging can scale three-D X-AI chip capability and function by means of 12X to succeed in 1,536 Gb (192 GB) capability and 120 TB/s processing throughput with a unmarried three-D X-AI chip.
“Typical AI chips use processor-based neural networks. This involves combining high-bandwidth memory to simulate synapses for storing weight data and graphical processing units (GPUs) to simulate neurons for performing mathematical calculations. Performance is limited by the data transfer between HBM and GPU, with back-and-forth data transfer lowering AI chip performance and increasing power consumption,” mentioned Andy Hsu, Founder & CEO of NEO Semiconductor. “AI chips with 3D X-AI use memory-based neural networks. These chips possess neural network functions with synapses and neurons in each 3D X-AI chip. They are used to drastically reduce the heavy workload of data transfer data between GPU and HBM when performing AI operations. Our invention drastically improves AI chip performance and sustainability”.
FMS: the Future of Memory and Storage is an all-inclusive global reminiscence and locker exhibit.
NEO Semiconductor goes to exhibit its applied sciences in sales space quantity 507. To time table a gathering with NEO Semiconductor at FMS, please touch: [email protected].
About NEO Semiconductor
NEO Semiconductor is a high-tech corporate occupied with advancing three-D NAND flash, three-D DRAM, and three-D AI applied sciences. The corporate was once based in 2012 by means of Andy Hsu and a group in San Jose, California, and owns greater than 25 U.S. patents. In 2020, the corporate made a leap forward in three-D NAND structure named X-NAND™ that may reach SLC efficiency from TLC and QLC reminiscence to serve high-speed, low cost answers for plenty of programs, together with 5G and AI. In 2022, the corporate introduced its X-DRAM™ generation, representing a unused structure that may ship DRAM with the sector’s lowest energy intake. In 2023, NEO introduced its ground-breaking three-D X-DRAM™ generation, a duel changer within the reminiscence business, enabling the sector’s first three-D NAND-like DRAM to unravel capability scaling bottlenecks and progress the marketplace life the restrictions of 2D DRAM. In 2024, three-D X-AI™ generation was once unveiled to pioneer AI neural networks in three-D reminiscence to revolutionize the efficiency, energy intake, and value of AI Chips. For more info, talk over with https://neosemic.com/.
Media and Analyst Touch:
Maya Lustig
[email protected]
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SOURCE NEO Semiconductor
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